Cite
HARVARD Citation
Gallardo, J. et al. (2022). Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability. Microelectronics and reliability. p. . [Online].
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Gallardo, J. et al. (2022). Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability. Microelectronics and reliability. p. . [Online].