Electrical and magnetotransport properties of In0.95Mn0.05Sb film. (2022)

• Record Type: Journal Article
• Authors: Agrawal, Naveen; Sarkar, Mitesh; Dhruv, D.K.
• Is Part Of: Materials today. Volume 59:Part 3(2022)
• Page Start: 1621
• Page End: 1624
• Publication Date: 2022
• Subjects: Thin film -- Dc resistivity -- Magnetoresistance -- Surface morphology -- Magnetic interaction at the surface; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2022.03.321
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: The In0.95 Mn0.05 Sb film has been obtained on a Silicon substrate using a thermally evaporated technique. The structural, electrical, magnetotransport and surface magnetic interaction properties of the Mn-doped InSb film are investigated. The X-ray diffractogram shows a single-phase nanocrystalline structure in the highly oriented direction of (1 1 1). The upturn in the resistivity observed at (<35 K) low temperature is attributed to the Coulomb Blockade effect. From the resistivity measurement, the observed bandgap is 0.16 eV. At room temperature, negative magnetoresistance is observed. The weak magnetic signals at the surface are observed through magnetic force microscopy.