To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices. Issue 21 (8th February 2022)

• Record Type: Journal Article
• Authors: Paul, Febin; Paul, Shashi
• Is Part Of: Small. Volume 18:Issue 21(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-02-08
• Subjects: capacitive memory and nanoparticles based memory -- conduction mechanism -- nanocomposite -- non‐volatile memory -- polymer memory -- resistive memory; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202106442
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Organic memory devices are a rapidly evolving field with much improvement in device performance, fabrication, and application. But the reports have been disparate in terms of the material behavior and the switching mechanisms in the devices. And, despite the advantages, the lack of agreement in regards to the switching behavior of the memory devices is the biggest challenge that the field must overcome to mature as a commercial competitor. This lack of consensus has been the motivation of this work wherein various works are compiled together to understand influencing factors in the memory devices. Different works are compared together to discover some clues about the nature of the switching occurring in the devices, along with some missing links that would require further investigation. The charge storage mechanism is critically analyzed alongside the various resistive switching mechanisms such as filamentary conduction, redox‐based switching, metal oxide switching, and other proposed mechanisms. The factors that affect the switching process are also analyzed including the effect of nanoparticles, the effect of the choice of polymer, or even the effect of electrodes on the switching behavior and the performance parameters of the memory device. Abstract : This review traces the development in the organic memory device and discusses the various problems that continue to plague the field. Focusing on nanoparticle‐based memory, it dives into charge trapping mechanisms and the various interpretations of it over the last two decades. The study also covers resistive mechanisms such as the filament mechanism.