Wafer‐Scale Fabrication of 2D β‐In2Se3 Photodetectors. Issue 1 (9th November 2020)

• Record Type: Journal Article
• Authors: Claro, Marcel S.; Grzonka, Justyna; Nicoara, Nicoleta; Ferreira, Paulo J.; Sadewasser, Sascha
• Is Part Of: Advanced optical materials. Volume 9:Issue 1(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-11-09
• Subjects: 2D materials -- indium selenide -- molecular beam epitaxy -- photodetectors; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.202001034
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: 2D materials are considered the future of electronics and photonics, stimulated by their remarkable performance. Among the 2D materials family, β‐In2 Se3 shows good mobility, excellent photoresponsivity, and exotic ferroelectricity, making it suitable for a wide variety of applications. To date, most reported devices from 2D materials in general, and β‐In2 Se3 in specific, rely on cumbersome fabrication methods using mechanical exfoliation and transfer of layers onto other substrates. However, for a successful adoption of 2D materials in industry, reliable and reproducible large‐area growth of 2D materials is required. Here, the wafer‐scale epitaxial growth of 2D β‐In2 Se3 on c ‐sapphire using molecular beam epitaxy is demonstrated. Excellent materials quality of thick (90 nm) and very thin films, down to two quintuple layers (2 nm) is confirmed. Furthermore, the fabrication of hundreds of photodetector devices on a 2 in. wafer, using five quintuple layers of β‐In2 Se3, is demonstrated. They are sensitive to near‐infrared light up to 898 nm wavelength and show a response time of ≈7 ms, which is faster than any result previously reported for β‐In2 Se3 photodetectors. The devices are produced using photolithography and other standard semiconductor processing methods, which allows easy integration into the current Si technology. Abstract : The epitaxial growth of high‐quality and single‐phase β‐In2 Se3 by molecular beam epitaxy (MBE) on a 2 in. wafer scale is demonstrated down to two quintuple layers (QL). The wafer‐scale fabrication of photodetectors with five QL is realized using the MBE and other standard semiconductor processing methods, which allows easy integration into the current semiconductor technology.