Photoelectrical Properties of Fullerene Doped P3HT Blends for Photo Sensing Applications. (2015)

• Record Type: Journal Article
• Authors: Aruna, P.; Joseph, C.M.
• Is Part Of: Materials today. Volume 2:Number 4/5(2015)
• Page Start: 1309
• Page End: 1315
• Publication Date: 2015
• Subjects: Organic semiconductors -- Thin films -- Conjugated polymer -- P3HT: PCBM blend -- Photo detector; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2015.07.047
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: Photoelectrical properties of fullerene (C60 ) doped spin coated thin films of Poly (3-hexylthiophene 2, 5 diyl) (P3 HT) and its blend with Phenyl-C61 Butyric-Acid-Methyl-Ester (PCBM) were studied. Photoresponse characteristics were studied by noting the resistance variation with exposure to illumination, as a function of time. Decrease of resistance to the exposure of light was observed in both P3 HT and its blend films indicating their high sensitivity to light. On/off ratio of resistance was 150 for P3 HT devices and relative current change (photoresponse), ΔIrep = Ilight /Idark was a high value of 166 in P3 HT devices. P3 HT devices showed a periodic and stable response characteristics compared to the P3 HT blend devices for several sensing cycles of photoelectrical studies.