Nanoscale dual-gate InAlAs/InGaAs HEMT with improved characteristics. Issue 2 (2nd April 2020)

• Record Type: Journal Article
• Authors: Mohapatra, M.; Panda, A. K.
• Is Part Of: International journal of electronics letters. Volume 8:Issue 2(2020)
• Page Start: 180
• Page End: 193
• Publication Date: 2020-04-02
• Subjects: SG-HEMT -- DG-HEMT -- DC and RF characteristics -- C-V characteristics -- short-channel effect -- device aspect ratio; Electronics -- Periodicals; Electronics; Periodicals; 621.38105
• DOI: 10.1080/21681724.2019.1582704
• Languages: English
• ISSNs: 2168-1732

Abstract

ABSTRACT: This paper deals with the DC and Radio Frequency (RF) characteristics of InAlAs/InGaAs-based dual-gate high-electron-mobility transistor (DG-HEMT) for a 50 nm gate length. In single-gate HEMT (SG-HEMT), the gate length having less than 100 nm shows poor transconductance ( g m ) which reduces the voltage gain ( A v ) and maximum oscillation frequency ( f max ). To overcome this problem, a dual-gate structure is designed keeping the device dimensions unchanged and a numerical model is developed to study the effect of the dual gate. A comparative study of SG-HEMT and DG-HEMT is presented. For a DG-HEMT, a maximum drain current ( Ids ) of 310 mA/mm at Vds = 0.1 V, a peak transconductance ( g m _max ) of 2294 mS/mm, a cut-off frequency ( fT ) of 100 GHz and a maximum oscillation frequency ( f max ) of 270 GHz have been achieved. For reduced gate length, the DG-HEMT performs better due to the presence of dual gate and double heterojunction.