Interface Studies in HgTe/HgCdTe Quantum Wells. Issue 5 (11th February 2020)

• Record Type: Journal Article
• Authors: Mikhailov, Nikolay; Shvets, Vasiliy; Ikusov, Danil; Uzhakov, Ivan; Dvoretsky, Sergey; Mynbaev, Karim; Dluzewski, Piotr; Morgiel, Jerzy; Swiatek, Zbigniew; Bonchyk, Olexander; Izhnin, Ihor
• Is Part Of: Physica status solidi. Volume 257:Issue 5(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-11
• Subjects: composition profiles -- ellipsometry -- HgTe/HgCdTe quantum wells -- interfaces -- transmission electron microscopy; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201900598
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum‐well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright‐field and scanning/high‐angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated. Abstract : A study of interfaces in HgTe/HgCdTe quantum wells grown by molecular beam epitaxy on GaAs substrates is conducted with the use of bright‐field and scanning/high‐angle annular dark field transmission electron microscopy. The results obtained are compared with the data of in situ ellipsometric control over well parameters, and the effect of the growth mode on the interface sharpness is shown.