Enhancement of Nonlinear Optical and Dielectric Properties of Cu2O Films Sandwiched with Indium Slabs. Issue 5 (3rd February 2020)

• Record Type: Journal Article
• Authors: Omar, Ahmad; Qasrawi, Atef F.
• Is Part Of: Physica status solidi. Volume 257:Issue 5(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-03
• Subjects: Cu2O/In/Cu2O -- drift mobility -- indium slabs -- optical properties -- plasmon frequency -- stacked layers; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201900711
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : In this work, the effects of the insertion of indium slabs of thickness 100 nm on the performance of stacked layers of Cu2 O are reported. Cu2 O/In/Cu2 O thin films coated onto ultrasonically cleaned glass substrates are structurally, morphologically, optically, and dielectrically studied. The glassy films of Cu2 O display larger, well‐ordered grains in an amorphous sea of Cu2 O upon insertion of indium slabs between layers of Cu2 O. Optically, the indium slabs increase the light absorbability in the IR region by 12.5 times, narrow the energy bandgap, and widen the energy band tails region. They also enhance the nonlinearity in the dielectric response and increase the dielectric constant values by 2.5 times. In addition, the optical conductivity parameters are obtained from the fittings of the dielectric spectra. The analyses reveal an enhancement in the drift mobility, plasmon frequency, and free carrier density via stacking of the indium layer between layers of Cu2 O. The drift mobility and plasmon frequency values reach 232.4 cm 2 V −1 s −1 and 3.95 GHz at a reduced hole‐plasmon frequency value of 6.0 × 10 14 Hz (2.48 eV). The values are promising as they indicate the applicability of Cu2 O/In/Cu2 O interfaces in optoelectronics as thin film transistors and electromagnetic wave cavities. Abstract : The effects of the insertion of indium slabs of 100 nm thickness on the performance of stacked layers of Cu2 O are reported. The indium slabs increase the light absorbability, narrow the energy bandgap, enhance the nonlinearity in the dielectric response, and increase the drift mobility, plasmon frequency, and free carrier density, making Cu2 O more suitable for optoelectronic applications.