Wafer‐Scale Diisopropylammonium Bromide Films for Low‐Power Lateral Organic Ferroelectric Capacitors. (30th November 2020)

• Record Type: Journal Article
• Authors: Jin, Wei; Xu, Mingsheng; Zhou, Xiaojie; Wang, Jiao; Cai, Yichen; Jawad, Husnain; Yan, Mengge; Tian, Bobo; Nie, Qingmiao; Yan, Bo; Cong, Chunxiao; Qiu, Zhi‐Jun; Liu, Ran; Hu, Laigui
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 1(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-11-30
• Subjects: diisopropylammonium bromide -- ferroelectric polarization -- molecular ferroelectrics -- nonvolatile memory devices; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202000778
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Organic ferroelectrics, particularly the polymer polyvinylidene fluoride and its copolymer polyvinylidene fluoride‐trifluoroethylene, have received much attention owing to their low cost, flexibility, and convenient thin film fabrication. However, development of this outstanding material for electronic applications is significantly impeded by its attributes of large coercive electric fields and poor spontaneous polarization. While the recent breakthroughs reveal that several kinds of molecular ferroelectrics (e.g., diisopropylammonium bromide (DIPAB)) can exhibit excellent properties comparable to inorganic ferroelectrics, it is still difficult to obtain high‐quality continuous thin films for ferroelectric devices with high performance. In this work, a simple solution strategy is used for the preparation of large‐area high crystallinity or even single‐crystal DIPAB films. Subsequently, planar ferroelectric capacitors are developed with large in‐plane ferroelectric polarization. These capacitors possess excellent memory function with small operating voltages (1–3 V), and a record remnant polarization of 13 µC cm −2 for organic ferroelectric devices. The findings have the potential to pave the way for the substitution of conventional ferroelectric polymers with DIPAB films for future organic ferroelectric devices. Abstract : Large‐area high‐quality diisopropylammonium bromide films and lateral capacitors with low operation voltages of 1–3 V are demonstrated by using a simple solution process. The molecular ferroelectric films with high crystallinity enable a perfect achievement of memory functions with large remnant polarization (≈13 µC cm ‐2 ), thus expediting the utility of the air‐stable molecular ferroelectrics for various applications.