Effects of growth technique on the microstructure of CuInSe2 ternary semiconductor compound. Issue 1 (January 2020)

• Record Type: Journal Article
• Authors: Mobarak, M.; Zied, M.A.; Mostafa, Massaud; Ashari, M.
• Is Part Of: Heliyon. Volume 6:Issue 1(2020)
• Publication Date: 2020-01
• Subjects: Condensed matter physics -- Materials science -- Chalcopyrite -- Microstructure -- Grain size -- Microstrain -- Stochiometry; Research -- Periodicals; Medical sciences -- Periodicals; Natural history -- Periodicals; Social sciences -- Periodicals; Earth sciences -- Periodicals; Physical sciences -- Periodicals; 507.2
• DOI: 10.1016/j.heliyon.2020.e03196
• Languages: English
• ISSNs: 2405-8440

Abstract

Abstract: X-ray diffraction (XRD) and Energy-dispersive X-ray fluorescence spectrometer (EDXRF) are employed to investigate the microstructure of bulk C u I n S e 2 specimens grown through the Bridgman technique and traveling heater process, respectively. We investigate the lattice parameters, grain sizes, and microstrains of the two grown samples. For a crystal grown by the vertical Bridgeman method, the vacancy V C u serves as an acceptor, resulting in p-type conduction, whereas the vacancy V S e expected to serve as a donor, occurring in n-type conduction for the crystal grown via the traveling heater technique. The concentration of crystal grown via the VBM is determined to be p-type, whereas the concentration of that grown via the THM is n-type. Concerning C u I n S e 2 crystal, the determined crystallite sizes obtained to be 165 and 182 nm for the VBM and THM, respectively. Abstract : Condensed matter physics; Materials science; Chalcopyrite; Microstructure; Grain size; Microstrain; Stochiometry