Cite
HARVARD Citation
Wang, L. et al. (2022). Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress. Microelectronics and reliability. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Wang, L. et al. (2022). Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress. Microelectronics and reliability. p. . [Online].