A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect. Issue 31 (29th July 2021)
- Record Type:
- Journal Article
- Title:
- A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect. Issue 31 (29th July 2021)
- Main Title:
- A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect
- Authors:
- Wu, Di
Guo, Chenguang
Wang, Zhaoyang
Ren, Xiaoyan
Tian, Yongzhi
Shi, Zhifeng
Lin, Pei
Tian, Yongtao
Chen, Yongsheng
Li, Xinjian - Abstract:
- Abstract : A WS2 /pyramid Si 2D/3D mixed-dimensional vdW heterojunction device shows a broadband response spectrum up to 3.0 μm with high performance due to the strong light confinement effect of the pyramid Si and defect-induced narrowed bandgap of the WS2 film. Abstract : Broadband photodetection is of vital importance for both civil and technological applications. The widespread use of commercial photodiodes based on traditional semiconductors ( e.g. GaN, Si, and InGaAs) is limited to the relatively narrow response range. In this work, we have demonstrated a self-driven and broadband photodetector based on WS2 /pyramid Si 2D/3D mixed-dimensional van der Waals (vdW) heterojunction, which is assembled by directly transferring 2D WS2 film on 3D pyramid Si. Thanks to the enhanced light absorption with the pyramid Si structure, the defect-induced narrowed bandgap of the WS2 film, and high-quality vdW heterojunction, impressive device performances in terms of a large responsivity of 290 mA W −1, a high specific detectivity of up to 2.6 × 10 14 Jones and an ultrabroad response spectrum ranging from 265 nm to 3.0 μm are achieved at zero bias. Importantly, the photodetector can function as an infrared imaging cell with a high spatial resolution. The totality of these excellent features confirms that the demonstrated WS2 /pyramid Si 2D/3D mixed-dimensional vdW heterojunction device may hold great promise for applications in high-performance broadband infrared photodetection andAbstract : A WS2 /pyramid Si 2D/3D mixed-dimensional vdW heterojunction device shows a broadband response spectrum up to 3.0 μm with high performance due to the strong light confinement effect of the pyramid Si and defect-induced narrowed bandgap of the WS2 film. Abstract : Broadband photodetection is of vital importance for both civil and technological applications. The widespread use of commercial photodiodes based on traditional semiconductors ( e.g. GaN, Si, and InGaAs) is limited to the relatively narrow response range. In this work, we have demonstrated a self-driven and broadband photodetector based on WS2 /pyramid Si 2D/3D mixed-dimensional van der Waals (vdW) heterojunction, which is assembled by directly transferring 2D WS2 film on 3D pyramid Si. Thanks to the enhanced light absorption with the pyramid Si structure, the defect-induced narrowed bandgap of the WS2 film, and high-quality vdW heterojunction, impressive device performances in terms of a large responsivity of 290 mA W −1, a high specific detectivity of up to 2.6 × 10 14 Jones and an ultrabroad response spectrum ranging from 265 nm to 3.0 μm are achieved at zero bias. Importantly, the photodetector can function as an infrared imaging cell with a high spatial resolution. The totality of these excellent features confirms that the demonstrated WS2 /pyramid Si 2D/3D mixed-dimensional vdW heterojunction device may hold great promise for applications in high-performance broadband infrared photodetection and imaging. … (more)
- Is Part Of:
- Nanoscale. Volume 13:Issue 31(2021)
- Journal:
- Nanoscale
- Issue:
- Volume 13:Issue 31(2021)
- Issue Display:
- Volume 13, Issue 31 (2021)
- Year:
- 2021
- Volume:
- 13
- Issue:
- 31
- Issue Sort Value:
- 2021-0013-0031-0000
- Page Start:
- 13550
- Page End:
- 13557
- Publication Date:
- 2021-07-29
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d1nr03243g ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 21601.xml