Effects of annealing temperatures on energy storage performance of sol-gel derived (Ba0.95, Sr0.05) (Zr0.2, Ti0.8) O3 thin films. Issue 13 (1st July 2022)

• Record Type: Journal Article
• Authors: Ni, Pengfei; Chen, Bingyi; Wei, Xianhua
• Is Part Of: Ceramics international. Volume 48:Issue 13(2022)
• Page Start: 18884
• Page End: 18890
• Publication Date: 2022-07-01
• Subjects: Dielectric energy storage -- (Ba0.95, Sr0.05)(Zr0.2, Ti0.8)O3 -- Relaxor ferroelectric -- Sol-gel -- Thin film; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.03.167
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Dielectric polarization and breakdown strength of dielectrics generally show directly and inversely dependent upon their crystallization, respectively. Therefore, achieving the maximum energy storage density should be expected by controlling the crystallization. A serial of ferroelectric (Ba0.95, Sr0.05 )(Zr0.2, Ti0.8 )O3 (BSZT) thin films were prepared by the sol-gel method. Effects of annealing temperatures on the microstructure, dielectric and energy storage performance of the films were investigated. The results indicate that BSZT thin films annealed at 600 °C for 30 min demonstrate the highest recoverable energy density and efficiency (50.5 J/cm 3 and 91.9%). Such superior energy storage performance is attributed to an ultrahigh electric breakdown strength (6.65 MV/cm) induced by the dense amorphous-nanocrystalline microstructure. This work creates a new way for optimizing the energy storage performance of dielectric thin films via balancing their dielectric polarization and breakdown strength at appropriate heating processing temperature.