High-performance polarization-sensitive photodetectors on two-dimensional β-InSe. Issue 5 (31st May 2021)

• Record Type: Journal Article
• Authors: Guo, Zhinan; Cao, Rui; Wang, Huide; Zhang, Xi; Meng, Fanxu; Chen, Xue; Gao, Siyan; Sang, David K; Nguyen, Thi Huong; Duong, Anh Tuan; Zhao, Jinlai; Zeng, Yu-Jia; Cho, Sunglae; Zhao, Bing; Tan, Ping-Heng; Zhang, Han; Fan, Dianyuan
• Is Part Of: National science review. Volume 9:Issue 5(2022)
• Publication Date: 2021-05-31
• Subjects: 2D materials -- polarization -- photodetectors -- β-InSe -- Raman spectra; Science -- Periodicals; 505
• DOI: 10.1093/nsr/nwab098
• Languages: English
• ISSNs: 2095-5138

Abstract

Abstract: Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes ( γ -, ϵ - and β -phase) of InSe, only the crystal lattice of InSe in β -phase ( β -InSe) belongs to a non-symmetry point group of $D_{6h}^4$, which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β -InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β -InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β -InSe have been experimentally and theoretically proven, showing that the β -InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β -InSe as a competitive candidate for filter-free polarization-sensitive photodetectors. Abstract : p-type β -InSe has been successfully prepared, and its high anisotropic electronic and optoelectronic properties have been demonstrated by angle-resolved polarized Raman and applied on high-performance polarization-sensitive photodetectors.