Domain reversal and current transport property in BiFeO3 films. Issue 13 (1st July 2022)

• Record Type: Journal Article
• Authors: Geng, Wenping; Qiao, Xiaojun; He, Jinlong; Wei, Huifen; Zheng, Dongwan; Xue, Gang; Zhao, Caiqin; Meng, Jianwei; Bi, Kaixi; Yu, Junbin; Shi, Yikun; Chou, Xiujian
• Is Part Of: Ceramics international. Volume 48:Issue 13(2022)
• Page Start: 18151
• Page End: 18156
• Publication Date: 2022-07-01
• Subjects: Ferroelectric films -- BiFeO3 -- Charged domain walls -- Diode transport; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.03.073
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: The electrical properties and domain reversal in BiFeO3 ferroelectric films were studied using sandwiched heterostructures and piezoresponse force microscopy. A robust polarization state was observed, combined with a switchable domain pattern and a remanent polarization of approximately 100 μC cm −2 . In addition, domain reversal was explored using scanning probe microscopy. The results show that dipoles could be reversed along the direction of the electric field under a negative tip bias, leading to carrier gathering near the domain walls. The enhanced conductivity near the domain walls was owing to the discontinuous polarization boundary conditions. In addition, typical diode-like current transport properties are sensitive to various temperature conditions, which is attributed to the Schottky barriers at the contact interface. These findings extend the current understanding of domain texture reversal in ferroelectric films and shed light on their potential applications for future ferroelectric random-access memory operations over a wide temperature range.