Cite
HARVARD Citation
Schönweger, G. et al. (2022). From Fully Strained to Relaxed: Epitaxial Ferroelectric Al1‐xScxN for III‐N Technology. Advanced functional materials. p. n/a. [Online].
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Schönweger, G. et al. (2022). From Fully Strained to Relaxed: Epitaxial Ferroelectric Al1‐xScxN for III‐N Technology. Advanced functional materials. p. n/a. [Online].