Improved electrical and optical properties in epitaxial Cd2SnO4 films. Issue 2 (23rd October 2021)

• Record Type: Journal Article
• Authors: Zhao, Li; Li, Kaifeng; Lv, Kai; Zhang, Jinfeng; Liu, Zhongliang; Wang, Haifeng; Liu, Qinzhuang
• Is Part Of: Journal of the American Ceramic Society. Volume 105:Issue 2(2022)
• Page Start: 1220
• Page End: 1231
• Publication Date: 2021-10-23
• Subjects: Cd2SnO4 -- epitaxial films -- metal–semiconductor transition -- pulsed laser deposition; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.18169
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract: Epitaxial Cd2 SnO4 films were fabricated on MgO(00l) single crystalline substrates by pulsed laser deposition technique at various substrate temperatures and growth oxygen pressures. The microstructure, transport, and optical properties of the films were studied in detail. High‐resolution X‐ray diffraction and high‐resolution transmission electron microscopy results demonstrate that all the Cd2 SnO4 films are grown epitaxially on MgO(00l) substrates. Atomic force microscope images indicate that the films have smooth surface morphologies. Hall‐effect measurements reveal that the epitaxial film grown at 680 ° C and 40 Pa presents the minimum resistivity value of 0.61 mΩcm and maximal Hall mobility of 32.87 cm 2 V −1 s −1 . The metal–semiconductor transitions of Cd2 SnO4 films were observed and explained by competitive effects of two conductive mechanisms. The optical transmittance of the Cd2 SnO4 films is higher than 75% in the visible and near‐infrared range, and the optical bandgap was determined to be about 3.09 eV for the film grown at optimal condition. The band structure and density of states of the Cd2 SnO4 were calculated by the density functional theory. Abstract : (A) φ ‐scans of Cd2 SnO4 film deposited at 680°C and 40 Pa and MgO substrate around (220) reflections. (B) Room‐temperature resistivity, Hall mobility, and carrier concentration of the Cd2 SnO4 films as a function of substrate temperatures from 580°C to 780°C.