Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors. Issue 20 (18th April 2022)

• Record Type: Journal Article
• Authors: Xia, Yin; Zong, Lingyi; Pan, Yu; Chen, Xinyu; Zhou, Lihui; Song, Yiwen; Tong, Ling; Guo, Xiaojiao; Ma, Jingyi; Gou, Saifei; Xu, Zihan; Dai, Sheng; Zhang, David Wei; Zhou, Peng; Ye, Yu; Bao, Wenzhong
• Is Part Of: Small. Volume 18:Issue 20(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-04-18
• Subjects: 2D semiconductors -- complementary field‐effect transistors -- MoS 2 -- MoTe 2 -- multi‐bridge channel field‐effect transistors; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202107650
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Two‐dimentional semiconductors have shown potential applications in multi‐bridge channel field‐effect transistors (MBC‐FETs) and complementary field‐effect transistors (C‐FETs) due to their atomic thickness, stackability, and excellent electrical properties. However, the exploration of MBC‐FET and C‐FET based on large‐scale 2D semiconductors is still lacking. Here, based on a reliable vertical stacking of wafer‐scale 2D semiconductors, large‐scale MBC‐FETs and C‐FETs using n‐type MoS2 and p‐type MoTe2 are successfully fabricated. The drive current of an MBC‐FET with two layers of MoS2 channel (20 µm/10 µm) is up to 60 µA under 1 V bias. Compared with the single‐gate MoS2 FET, the carrier mobility of MBC‐FET is 2.3 times higher and the sub‐threshold swing is 70% smaller. Furthermore, NAND and NOR logic circuits are also constructed based on two vertically stacked MoS2 channels. Then, C‐FET arrays are fabricated by 3D integrating n‐type MoS2 FET and p‐type MoTe2 FET, which exhibit a voltage gain of 7 V/V when V DD = 4 V. In addition, this C‐FET device can directly convert light signals to an electrical digital signal within a single device. The demonstration of MBC‐FET and C‐FET based on large‐scale 2D semiconductors will promote the application of 2D semiconductors in next‐generation circuits. Abstract : A large‐scale multi‐bridge channel field‐effect transistor (MBC‐FET) and complementary field‐effect transistor (C‐FET) arrays are demonstrated based on wafer‐scale 2D semiconductors. Compared with conventional MoS2 FETs, the MBC‐FET structure exhibits improved electrical performance. By 3D integration of n‐type MoS2 and p‐type MoTe2, a C‐FET is built with a voltage gain of 7 V/V when V DD = 4 V.