Growth and Electrical Properties of Polymorphs of Mo-Te Crystals. (July 2022)

• Record Type: Journal Article
• Authors: Lu, Hao-Min; Cao, Lin; He, Yu-Cong; Yao, Shu-Hua; Zhou, Jian; Lv, Yang-Yang; Chen, Y.B.
• Is Part Of: Materials research bulletin. Volume 151(2022)
• Publication Date: 2022-07
• Subjects: A. chalcognides -- B. crystal growth -- C. Raman spectroscopy, D -- electrical properties; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2022.111796
• Languages: English
• ISSNs: 0025-5408

Abstract

Highlights: Several Mo-Te polymorphs crystals have been successfully grown. The Mo3 Te4 crystal has been grown successfully for the first time. 2H-MoTe2 and 1T'-MoTe2 exhibit 2D growth mechanism, while Mo3 Te4 has 3D one. 1T'-MoTe2 and Mo3 Te4 demonstrate metallic behavior, their MR is dependent on B 2 . 2H-MoTe2 exhibits semiconductor behavior with a large linear magnetoresistance. Abstract: In this study, several polymorphs of Mo-Te (2H-MoTe2, 1T'-MoTe2, and Mo3 Te4 ) single crystals are successfully grown. Mo3 Te4 crystals are grown for the first time. The growth mechanism of 2H-MoTe2 and 1T'-MoTe2 crystals is a two-dimensional layer-by-layer mode, whereas that of Mo3 Te4 crystals is a three-dimensional mode. The temperature-dependent resistivity of 1T'-MoTe2 and Mo3 Te4 follows the metallic behavior, and their magnetoresistance (MR) is dependent on the square of the magnetic field. And the MR behavior of Mo3 Te4 follows the Kohler's law (<50 K), strongly suggesting Mo3 Te4 is a simple metal. Different from above two compounds, 2H-MoTe2 exhibits a semiconductor-like resistivity-temperature relationship and a large linear MR. The scale relationship between large mobility and MR suggests that the linear MR originates from disorder effects. The resistivity-temperature behaviors of as-grown crystals are in line with the first-principles calculations. This study reveals the rich structural and electrical properties of the Mo-Te system. Graphical Abstract: Image, graphical abstract