Cite
HARVARD Citation
Yang, J. et al. (2022). Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources. Advanced materials interfaces. 9 (15), p. n/a. [Online].
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Yang, J. et al. (2022). Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources. Advanced materials interfaces. 9 (15), p. n/a. [Online].