Effective Mass from Seebeck Coefficient. (9th February 2022)
- Record Type:
- Journal Article
- Title:
- Effective Mass from Seebeck Coefficient. (9th February 2022)
- Main Title:
- Effective Mass from Seebeck Coefficient
- Authors:
- Snyder, Gerald Jeffrey
Pereyra, Alessandro
Gurunathan, Ramya - Abstract:
- Abstract: Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced m S ∗ m e = 0.924 ( 300 K T ) ( n H 10 20 cm − 3 ) 2 / 3 [ 3 ( exp [ | S | k B / e − 2 ] − 0.17 ) 2 / 3 1 + exp [ − 5 ( | S | k B / e − k B / e | S | ) ] + | S | k B / e 1 + exp [ 5 ( | S | k B / e − k B / e | S | ) ] ] here m S ∗ is the Seebeck effective mass, n H is the charge carrier concentration measured by the Hall effect ( n H = 1/ eR H, R H is Hall resistance) in 10 20 cm −3, T is the absolute temperature in K, S is the Seebeck coefficient, and k B / e = 86.3 μV K −1 . This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials. Abstract : The effective mass is a fundamental property of electronicAbstract: Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced m S ∗ m e = 0.924 ( 300 K T ) ( n H 10 20 cm − 3 ) 2 / 3 [ 3 ( exp [ | S | k B / e − 2 ] − 0.17 ) 2 / 3 1 + exp [ − 5 ( | S | k B / e − k B / e | S | ) ] + | S | k B / e 1 + exp [ 5 ( | S | k B / e − k B / e | S | ) ] ] here m S ∗ is the Seebeck effective mass, n H is the charge carrier concentration measured by the Hall effect ( n H = 1/ eR H, R H is Hall resistance) in 10 20 cm −3, T is the absolute temperature in K, S is the Seebeck coefficient, and k B / e = 86.3 μV K −1 . This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials. Abstract : The effective mass is a fundamental property of electronic structure and transport but has been difficult to measure experimentally. An experimental effective mass parameter, termed the Seebeck effective mass, is derived here from measurements of the Seebeck coefficient and charge carrier concentration. Analysis of the Seebeck effective mass is used to identify changes in electronic bandstructure directly from transport measurements. … (more)
- Is Part Of:
- Advanced functional materials. Volume 32:Number 20(2022)
- Journal:
- Advanced functional materials
- Issue:
- Volume 32:Number 20(2022)
- Issue Display:
- Volume 32, Issue 20 (2022)
- Year:
- 2022
- Volume:
- 32
- Issue:
- 20
- Issue Sort Value:
- 2022-0032-0020-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2022-02-09
- Subjects:
- effective mass -- electronic transport -- Hall effect -- Seebeck coefficient -- semiconductor materials -- thermoelectric materials
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202112772 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 21469.xml