Fabrication and transport properties of thermally evaporated cadmium selenide thin films for photovoltaic applications. (2022)

• Record Type: Journal Article
• Authors: Dhruv, D.K.; Dhruv, S.D.; Agrawal, Naveen; Patel, P.B.
• Is Part Of: Materials today. Volume 55:Part 1(2022)
• Page Start: 67
• Page End: 72
• Publication Date: 2022
• Subjects: Vacuum deposition -- Au/n-CdTe Schottky diode -- Current (I)-Voltage (V) characterization -- Capacitance (C)-Voltage (V) characterization -- Barrier height -- Energy band diagram -- Photovoltaic effect; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2021.12.173
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: The present research article reports the fabrication and transport properties of Au/ n -CdTe Schottky diode prepared by the thermal evaporation technique. The microstructural examination of CdTe thin film was carried out using transmission electron microscopy (TEM). The diode was endangered to current ( I )-voltage ( V ) and capacitance ( C )-voltage ( V ) characterization using a computer-controlled semiconductor characterization system (SCS-4200) in dark surroundings. The activation and bandgap energies of n -CdTe were determined by plotting DC electrical resistance ( R ) variation with temperature ( T ). The I-V analysis of pristine Schottky diode showed rectifying behaviour, and the diode' possible conduction mechanisms were determined. The diode ideality factor, barrier height and carrier concentration were derived accordingly. A theoretical energy band diagram was constructed for the Au/ n -CdTe Schottky diode-based Anderson's model. The photovoltaic behaviour of the fabricated Schottky diode was investigated, and results are reported. The implications are discussed.