Enhanced photocatalytic degradation and H2 evolution performance of NCDs/S-C3N4 S-scheme heterojunction constructed by π-π conjugate self-assembly. (1st July 2022)
- Record Type:
- Journal Article
- Title:
- Enhanced photocatalytic degradation and H2 evolution performance of NCDs/S-C3N4 S-scheme heterojunction constructed by π-π conjugate self-assembly. (1st July 2022)
- Main Title:
- Enhanced photocatalytic degradation and H2 evolution performance of NCDs/S-C3N4 S-scheme heterojunction constructed by π-π conjugate self-assembly
- Authors:
- Li, Xibao
Luo, Qiuning
Han, Lu
Deng, Fang
Yang, Ya
Dong, Fan - Abstract:
- Highlights: Novel 0D/2D NCDs/S-C3 N4 S-scheme heterojunction was prepared by a simple solvent evaporation induced self-assembly method. FT-IR and HRTEM confirmed that NCDs were supported on S-C3 N4 through π-π conjugate interaction. NCDs/S-C3 N4 demonstrated superior photocatalytic performance in degrading organic pollutants and hydrogen evolution. The enhanced photocatalytic activity was attributed to the formation of S-scheme heterojunction with high redox potentials. Abstract: Constructing heterojunction between two semiconductors with matched energy band structure is an effective modification method to obtain excellent photocatalysts. The experimental scheme adopts a simple solvent method to self-assemble nitrogen doped carbon dots (NCDs) on the surface of sulfur doped carbon nitride (S-C3 N4 ) semiconductor through π-π conjugate interaction. Based on this, a novel 0D/2D S-scheme heterojunction NCDs/S-C3 N4 hybrid was successfully prepared. The degradation kinetic constants of NCDs/S-C3 N4 for rhodamine B (RhB) and p-nitrophenol (PNP) reached 0.23522 and 0.01342 min −1, respectively, which were 2.72 and 2.65 times that of S-C3 N4 . The highest photocatalytic hydrogen evolution rate was observed under the simulated sunlight irradiation, which was 2.30 times that of S-C3 N4 . The improvement of photocatalytic performance was mainly based on the formation of the S-scheme heterojunction between S-C3 N4 and NCDs. The effects of internal electric field, π-π conjugateHighlights: Novel 0D/2D NCDs/S-C3 N4 S-scheme heterojunction was prepared by a simple solvent evaporation induced self-assembly method. FT-IR and HRTEM confirmed that NCDs were supported on S-C3 N4 through π-π conjugate interaction. NCDs/S-C3 N4 demonstrated superior photocatalytic performance in degrading organic pollutants and hydrogen evolution. The enhanced photocatalytic activity was attributed to the formation of S-scheme heterojunction with high redox potentials. Abstract: Constructing heterojunction between two semiconductors with matched energy band structure is an effective modification method to obtain excellent photocatalysts. The experimental scheme adopts a simple solvent method to self-assemble nitrogen doped carbon dots (NCDs) on the surface of sulfur doped carbon nitride (S-C3 N4 ) semiconductor through π-π conjugate interaction. Based on this, a novel 0D/2D S-scheme heterojunction NCDs/S-C3 N4 hybrid was successfully prepared. The degradation kinetic constants of NCDs/S-C3 N4 for rhodamine B (RhB) and p-nitrophenol (PNP) reached 0.23522 and 0.01342 min −1, respectively, which were 2.72 and 2.65 times that of S-C3 N4 . The highest photocatalytic hydrogen evolution rate was observed under the simulated sunlight irradiation, which was 2.30 times that of S-C3 N4 . The improvement of photocatalytic performance was mainly based on the formation of the S-scheme heterojunction between S-C3 N4 and NCDs. The effects of internal electric field, π-π conjugate interaction and band bending promoted the photogenerated h + and e − with low redox ability to recombine and retained the beneficial h + and e − with strong redox ability, which contributed to the production of more active species of h + and O2 −, therefore the photocatalytic degradation and hydrogen evolution performance were significantly enhanced. … (more)
- Is Part Of:
- Journal of materials science & technology. Volume 114(2022)
- Journal:
- Journal of materials science & technology
- Issue:
- Volume 114(2022)
- Issue Display:
- Volume 114, Issue 2022 (2022)
- Year:
- 2022
- Volume:
- 114
- Issue:
- 2022
- Issue Sort Value:
- 2022-0114-2022-0000
- Page Start:
- 222
- Page End:
- 232
- Publication Date:
- 2022-07-01
- Subjects:
- S-scheme -- Internal electric field -- Hydrogen evolution -- C3N4 -- π–π interaction
Metals -- Periodicals
Materials science -- Periodicals
Materials science
Metals
Periodicals
620.1105 - Journal URLs:
- http://www.jmst.org/EN/volumn/home.shtml ↗
http://www.sciencedirect.com/science/journal/10050302 ↗
http://www.sciencedirect.com/ ↗ - DOI:
- 10.1016/j.jmst.2021.10.030 ↗
- Languages:
- English
- ISSNs:
- 1005-0302
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 21459.xml