High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure. Issue 5 (19th December 2021)

• Record Type: Journal Article
• Authors: Kim, Junghwan; Shiah, Yu‐Shien; Sim, Kihyung; Iimura, Soshi; Abe, Katsumi; Tsuji, Masatake; Sasase, Masato; Hosono, Hideo
• Is Part Of: Advanced science. Volume 9:Issue 5(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-12-19
• Subjects: complementary metal oxide semiconductors (CMOS) inverter -- core–shell structures -- Pb‐free perovskites -- thin film transistors -- tin halide perovskites; Science -- Periodicals; 505
• DOI: 10.1002/advs.202104993
• Languages: English
• ISSNs: 2198-3844

Abstract

Abstract: Metal halide perovskites (MHPs) are plausible candidates for practical p‐type semiconductors. However, in thin film transistor (TFT) applications, both 2D PEA2 SnI4 and 3D FASnI3 MHPs have different drawbacks. In 2D MHP, the TFT mobility is seriously reduced by grain‐boundary issues, whereas 3D MHP has an uncontrollably high hole density, which results in quite a large threshold voltage ( V th ). To overcome these problems, a new concept based on a 2D–3D core–shell structure is herein proposed. In the proposed structure, a 3D MHP core is fully isolated by a 2D MHP, providing two desirable effects as follows. (i) V th can be independently controlled by the 2D component, and (ii) the grain‐boundary resistance is significantly improved by the 2D/3D interface. Moreover, SnF2 additives are used, and they facilitate the formation of the 2D/3D core–shell structure. Consequently, a high‐performance p‐type Sn‐based MHP TFT with a field‐effect mobility of ≈25 cm 2 V −1 s −1 is obtained. The voltage gain of a complementary metal oxide semiconductor (CMOS) inverter comprising an n‐channel InGaZnO x TFT and a p‐channel Sn‐MHP TFT is ≈200 V/V at V DD = 20 V. Overall, the proposed 2D/3D core–shell structure is expected to provide a new route for obtaining high‐performance MHP TFTs. Abstract : 2D–3D core‐shell structure is proposed as a new strategy for overcoming mobility‐threshold voltage ( V th ) trade‐off in conventional tin halide perovskite (Sn‐MHP) thin‐film transistors (TFTs). The morphology of fully isolated 3D by 2D Sn‐MHPs generates strong synergy that enables to control V th as well as obtain a high field‐effect mobility. The proposed 2D/3D Sn‐MHP TFT demonstrates a high mobility of ≈25 cm 2 V −1 s −1 .