Characterization and simulation of sputtering etched profile by focused gallium ion beam on GaN substrate. (April 2022)

• Record Type: Journal Article
• Authors: Lin, Xi; Fang, Chen; Liu, Haoyang; Wu, Guorong; Xing, Yan
• Is Part Of: Materials & design. Volume 216(2022)
• Publication Date: 2022-04
• Subjects: Focused gallium ion beam -- GaN -- Droplets -- Numerical model -- Structural characterization; Materials -- Periodicals; Engineering design -- Periodicals; Matériaux -- Périodiques; Conception technique -- Périodiques; Electronic journals; 620.11
• DOI: 10.1016/j.matdes.2022.110563
• Languages: English
• ISSNs: 0264-1275

Abstract

Graphical abstract: Highlights: The influence of different parameters on sputtering etched profile by Ga FIB on GaN substrate is discussed under the profile characterization experiments. The differences of sputtering etched regularity between GaN substrate and Si substrate are discussed. The forming mechanism and avoidance method of droplet phenomenon are analyzed. The GaN profile by Ga FIB is quantified with the assistance of Continuous cellular automaton (CCA) model. Abstract: With the continuous development of manufacturing technology of micro/nano devices based on GaN, focused gallium ion beam has become a momentous method for machining complex GaN structures. Therefore, this study focuses on the characterization and simulation of sputtering etched profile by Ga FIB on GaN substrate. First, the profile characterization experiments are carried out to analyze the influence of ion dose, dwelling time, and scan area, and the results reflect that the sputtering etched regularity on GaN substrate differs from that on Si substrate, especially in redeposition effect, milling rate, and droplet phenomenon. In addition, the forming mechanism of droplet phenomenon is discussed, and the milling experiments are conducted to research the droplets avoidance method, which shows that the appearance of droplets is impacted by ion dose and dwelling time. Finally, the sputtering yield of GaN under focused gallium ion beam is measured and sorted, and the simulation program is developed based on continuous cellular automaton (CCA) model. This work can provide a guidance for the further application of GaN-based materials.