Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors. Issue 9 (18th March 2022)

• Record Type: Journal Article
• Authors: Gan, Haibo; Hao, Qiaoyan; Liu, Jidong; Li, Peng; Qi, Dianyu; Liu, Fei; Lei, Ting; Zhang, Wenjing
• Is Part Of: Advanced optical materials. Volume 10:Issue 9(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-03-18
• Subjects: chemical vapor deposition -- copper–indium–selenide -- near‐infrared photodetectors -- ternary materials -- two‐dimensional materials; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.202200033
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: 2D semiconductors are promising for future photodetectors because of their dangling‐bond‐free surface, atomic thickness, tunable bandgap, high mobility, and flexible nature. However, the low light absorption is one of the main limits for the practical applications of 2D materials. Lots of efforts have been taken to optimize the light absorption, for example, constructing heterojunctions and exploring more photo‐sensitive 2D materials. Here, the epitaxial growth of layered copper–indium–selenide (CIS) nanoflakes is realized by chemical vapor deposition. The CIS nanoflakes are identified as β‐CuIn5 Se8 with size of tens of micrometers and thickness in the range of 3.8 to 45 nm. The CIS nanoflakes show n‐type behavior with field effect mobility of up to 30.4 cm 2 V −1 s −1 and an on/off ratio of 10 9 . In addition, the CIS nanoflakes are ultra‐sensitive in the visible and near‐infrared region (450–1240 nm). They exhibit high photoresponsivity (1.6 × 10 3 A W −1 ), high external quantum efficiency (2.2 × 10 5 %), and high specific detectivity (5.3 × 10 12 Jones) irradiated by a 900‐nm laser. These performances are competitive among the current 2D materials, suggesting that this type of CIS shows potential for future near‐infrared photodetector applications. Abstract : This paper reports epitaxial growth of layered copper–indium–selenide (β‐CuIn5 Se8 ) nanoflakes by chemical vapor deposition. These nanoflakes are ultra‐sensitive in the visible and near‐infrared region (450–1240 nm) with high photoresponsivity (1.6 × 10 3 A W ‐1 ), high external quantum efficiency, and high specific detectivity (5.3 × 10 12 Jones) irradiated by a 900‐nm laser, suggesting potential applications for future near‐infrared optoelectronics.