Electrode‐Induced Self‐Healed Monolayer MoS2 for High Performance Transistors and Phototransistors (Adv. Mater. 41/2021). Issue 41 (12th October 2021)

• Record Type: Journal Article
• Authors: Pak, Sangyeon; Jang, Seunghun; Kim, Taehun; Lim, Jungmoon; Hwang, Jae Seok; Cho, Yuljae; Chang, Hyunju; Jang, A‐Rang; Park, Kyung‐Ho; Hong, John; Cha, SeungNam
• Is Part Of: Advanced materials. Volume 33:Issue 41(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-12
• Subjects: flexible photodetector -- high mobility transistor -- low subthreshold swing -- MoS 2 -- self‐healing -- ultrasensitive photodetection; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202170323
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Self‐Healing Devices An innovative concept of a self‐healed electrode‐channel system employing ultrathin metallic copper monosulfide (CuS) and monolayered molybdenum disulfide (MoS2 ) is demonstrated by John Hong, SeungNam Cha, and co‐workers in article number 2102091 for the design of defect‐curable transistors and phototransistors. Excess sulfur adatoms from the CuS electrode spontaneously heal the defect sites in the MoS2 channel for record‐high transistor and phototransistor performance.