Aggregation Control, Surface Passivation, and Optimization of Device Structure toward Near‐Infrared Perovskite Quantum‐Dot Light‐Emitting Diodes with an EQE up to 15.4% (Adv. Mater. 18/2022). Issue 18 (5th May 2022)

• Record Type: Journal Article
• Authors: Tseng, Zong‐Liang; Chen, Lung‐Chien; Chao, Li‐Wei; Tsai, Meng‐Ju; Luo, Dian; Al Amin, Nurul Ridho; Liu, Shun‐Wei; Wong, Ken‐Tsung
• Is Part Of: Advanced materials. Volume 34:Issue 18(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-05-05
• Subjects: near‐infrared emission -- perovskites -- quantum dots -- quantum‐dot light‐emitting diodes; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202270132
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Perovskite Light‐Emitting Diodes A comprehensive optimization strategy leads to high‐efficiency near‐infrared quantum dot (QD)‐based light‐emitting diodes (QLEDs), as reported in article 2109785 by Zong‐Liang Tseng, Shun‐Wei Liu, Ken‐Tsung Wong, and co‐workers. Post‐treatment of encapsulated FAPbI3 QDs reduces QD surface defects, and the passivated QDs dispersed in n‐octane are effectively spin‐coated on top of a treated electrode, leading to full‐coverage, smooth, and dense QD films. The resulting QLED devices have electroluminescence λmax at 772 nm with external quantum efficiency up to 15.4% at a current density of 0.54 mA cm −2 (2.6 V).