Filament Engineering of Two‐Dimensional h‐BN for a Self‐Power Mechano‐Nociceptor System. Issue 16 (26th February 2022)

• Record Type: Journal Article
• Authors: Ding, Guanglong; Chen, Ruo‐Si; Xie, Peng; Yang, Baidong; Shang, Gang; Liu, Yang; Gao, Lili; Mo, Wen‐Ai; Zhou, Kui; Han, Su‐Ting; Zhou, Ye
• Is Part Of: Small. Volume 18:Issue 16(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-02-26
• Subjects: device uniformity -- diffusive memristors -- reservoir computing -- self‐power mechano‐nociceptor nociceptors -- triboelectric nanogenerators -- two‐dimensional h‐BN; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202200185
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well‐crystallized two‐dimensional (2D) h ‐BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag + between h ‐BN interlayer, is developed. The BN‐DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN‐DM to a self‐made triboelectric nanogenerator (TENG), a self‐power mechano‐nociceptor system, which can successfully mimic the important nociceptor features of "threshold", "relaxation" and "allodynia" is designed. Abstract : The Ag conductive filaments formation can be restricted from three to two dimensions by 2D h ‐BN, which can improve the device spatial uniformity significantly. Based on this h ‐BN based diffusive memristor, a reservoir computing system for digital pattern recognition and a self‐powered mechano‐nociceptor system for mimicking the important nociceptor features can be successfully built.