How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor–Diode Hybrid Integration. Issue 5 (16th December 2021)

• Record Type: Journal Article
• Authors: Liu, Chuan; Li, Xiaojie; Luo, Yiyang; Wang, Ya; Hu, Sujuan; Liu, Chenning; Liang, Xiaoci; Zhou, Hang; Chen, Jun; She, Juncong; Deng, Shaozhi
• Is Part Of: Advanced science. Volume 9:Issue 5(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-12-16
• Subjects: charge transport -- field‐effect transistors -- hybrid integration; Science -- Periodicals; 505
• DOI: 10.1002/advs.202104896
• Languages: English
• ISSNs: 2198-3844

Abstract

Abstract: Advanced field‐effect transistors (FETs) with nontrivial gates (e.g., offset‐gates, mid‐gates, split‐gates, or multi‐gates) or hybrid integrations (e.g., with diodes, photodetectors, or field‐emitters) have been extensively developed in pursuit for the "More‐than‐Moore" demand. But understanding their conduction mechanisms and predicting current–voltage relations is rather difficult due to countless combinations of materials and device factors. Here, it is shown that they could be understood within the same physical picture, i.e., charge transport from gated to nongated semiconductors. One proposes an indicator based on material and device factors for characterizing the transport and derives a unified and simplified solution for describing the current–voltage relations, current saturation, channel potentials, and drift field. It is verified by simulations and experiments of different types of devices with varied materials and device factors, employing organic, oxide, nanomaterial semiconductors in transistors or hybrid integrations. The concise and unified solution provides general rules for quick understanding and designing of these complex, innovative devices. Abstract : Advanced field‐effect transistors with nontrivial gates (e.g., offset‐gates, mid‐gates, split‐gates, or multi‐gates) or hybrid integrations (e.g., with diodes, photodetectors, or field‐emitters) have been difficult to understand due to countless combinations of materials. A concise and unified solution is given and validated for understanding how various materials and device factors determine the device performance.