High-temperature LTCC assembly and design of SiC BJT-based negative charge pump. Issue 2 (3rd April 2022)

• Record Type: Journal Article
• Authors: Roy, Sajib; Faruque, Khandokar Asif; Abbasi, Affan; Mantooth, Alan
• Is Part Of: International journal of electronics letters. Volume 10:Issue 2(2022)
• Page Start: 177
• Page End: 187
• Publication Date: 2022-04-03
• Subjects: Charge pump -- high-temperature -- SiC BJT -- LTCC -- RC oscillator; Electronics -- Periodicals; Electronics; Periodicals; 621.38105
• DOI: 10.1080/21681724.2021.1901997
• Languages: English
• ISSNs: 2168-1732

Abstract

ABSTRACT: This paper describes the negative charge pump design in state-of-the-art SiC BJT technology along with its assembly on the LTCC module for extremely high-temperature applications. Kiln thermal oven is used to test the system at 500°C and evaluate the system's high-temperature performance. The charge pump design is separated into two sections: a diode-connected BJT charge pump and a cross-coupled RC oscillator. Commercially available NHT dielectric capacitors (390 pF) are used for both circuit sections. The designed LTCC module used DuPont™ 9k7 dielectric with gold metallization for routing traces. The oscillator output frequency varied from 35.7 kHz to 125 kHz across temperature for a fixed supply voltage of 11 V.