A quasi-2D perovskite antireflection coating to boost the performance of multilayered PdTe2/Ge heterostructure-based near-infrared photodetectors. Issue 15 (24th March 2022)

• Record Type: Journal Article
• Authors: Chen, Huahan; Xie, Chao; Zhong, Xianpeng; Liang, Yi; Yang, Wenhua; Wu, Chunyan; Luo, Linbao
• Is Part Of: Journal of materials chemistry. Volume 10:Issue 15(2022)
• Page Start: 6025
• Page End: 6035
• Publication Date: 2022-03-24
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d2tc00438k
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : A quasi-2D perovskite film can function well as an antireflection coating to greatly boost the performance of a multilayered PdTe2 /Ge heterostructure-based near-infrared photodetector. Abstract : A hybrid heterostructure composed of two-dimensional (2D) material/narrow bandgap semiconductor represents a promising platform for designing highly efficient and cost-effective near-infrared (NIR) photodetectors. However, performance enhancement is usually restricted by reduced light usage due to relatively high refractive indexes and low absorption coefficients of the hybrid heterostructures. Herein, we demonstrate that a quasi-2D perovskite thin film can serve well as an antireflection coating to greatly boost the performance of a multilayered PdTe2 /Ge heterostructure-based NIR photodetector. Specifically, upon the perovskite coating with an optimized thickness, photoresponsivity and specific detectivity can be improved significantly from ∼526.4 mA W −1 to ∼976.2 mA W −1 and from ∼2.43 × 10 11 Jones to ∼4.78 × 10 11 Jones, respectively, under a 1550 nm optical communication wavelength with a light intensity of ∼70 μW cm −2 at zero bias. Meanwhile, other important performance parameters including dark current and response speed can maintain almost identical. Moreover, owing to the improved moisture resistance of the upper quasi-2D perovskite layer, the photodetector exhibits excellent device stability and operational durability under atmospheric conditions. The results not only provide a convenient route for improving the performance of NIR optoelectronic devices but also broaden the application scope of perovskite materials.