Performance limit of monolayer MoSi2N4 transistors. Issue 41 (7th October 2021)

• Record Type: Journal Article
• Authors: Sun, Xiaotian; Song, Zhigang; Huo, Nannan; Liu, Shiqi; Yang, Chen; Yang, Jie; Wang, Weizhou; Lu, Jing
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 41(2021)
• Page Start: 14683
• Page End: 14698
• Publication Date: 2021-10-07
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1tc02937a
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : The ultra-short gate-length ML MoSi2 N4 MOSFET can meet the ITRS requirements with low power dissipation. Abstract : Recently, a novel two-dimensional (2D) MoSi2 N4 has been successfully synthesized and features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science 369, 670, 2020). Through ab initio quantum transport simulations, we investigated the performance limits of the monolayer (ML) MoSi2 N4 metal-oxide-semiconductor field-effect transistors (MOSFETs). We found that the optimized n- and p-type ML MoSi2 N4 transistors can well satisfy the key criteria of the International Technology Roadmap for Semiconductors (ITRS) for high performance (HP) applications at a 3 nm gate length, while the p-type devices can also fulfill the requirement of low power (LP) applications at a 5 nm gate length. By taking advantage of the negative capacitance (NC) effect, both the n- and p-type MOSFETs can achieve the ITRS LP goal when the gate length is decreased to 3 nm. The ML MoSi2 N4 MOSFETs generally outperform their MoS2 counterparts. Hence, MoSi2 N4 is a potential alternative to MoS2 to expand Moore's law beyond the sub-5 nm scale.