Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS2 and SnSe2 nanosheets. Issue 58 (11th November 2021)
- Record Type:
- Journal Article
- Title:
- Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS2 and SnSe2 nanosheets. Issue 58 (11th November 2021)
- Main Title:
- Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS2 and SnSe2 nanosheets
- Authors:
- Sierra-Castillo, Ayrton
Haye, Emile
Acosta, Selene
Arenal, Raul
Bittencourt, Carla
Colomer, Jean-François - Abstract:
- Abstract : SnS2 and SnSe2 nanosheets were synthesized vertically aligned in different substrates by an AP-CVD method. Abstract : Laminated metal dichalcogenides are candidates for different potential applications ranging from catalysis to nanoelectronics. However, efforts are still needed to optimize synthesis methods aiming to control the number of layers, morphology, and crystallinity, parameters that govern the properties of the synthesized materials. Another important parameter is the thickness and the length of the samples with the possibility of large-scale growth of target homogeneous materials. Here, we report a chemical vapor deposition method at atmospheric pressure to produce vertically aligned tin dichalcogenide based-materials. Tin disulfide (SnS2 ) and tin diselenide (SnSe2 ) vertically aligned nanosheets have been synthesized and characterized by different methods showing their crystallinity and purity. Homogenous crystalline 2H-phase SnS2 nanosheets with high purity were synthesized with vertical orientation on substrates; sulfur vacancies were observed at the edges of the sheets. Similarly, in the crystalline 2H phase SnSe2 nanosheets selenium vacancies were observed at the edges. Moreover, these nanosheets are larger than the SnS2 nanosheets, show lower nanosheet homogeneity on substrates and contamination with selenium atoms from the synthesis was observed. The synthesized nanomaterials are interesting in various applications where the edge accessibilityAbstract : SnS2 and SnSe2 nanosheets were synthesized vertically aligned in different substrates by an AP-CVD method. Abstract : Laminated metal dichalcogenides are candidates for different potential applications ranging from catalysis to nanoelectronics. However, efforts are still needed to optimize synthesis methods aiming to control the number of layers, morphology, and crystallinity, parameters that govern the properties of the synthesized materials. Another important parameter is the thickness and the length of the samples with the possibility of large-scale growth of target homogeneous materials. Here, we report a chemical vapor deposition method at atmospheric pressure to produce vertically aligned tin dichalcogenide based-materials. Tin disulfide (SnS2 ) and tin diselenide (SnSe2 ) vertically aligned nanosheets have been synthesized and characterized by different methods showing their crystallinity and purity. Homogenous crystalline 2H-phase SnS2 nanosheets with high purity were synthesized with vertical orientation on substrates; sulfur vacancies were observed at the edges of the sheets. Similarly, in the crystalline 2H phase SnSe2 nanosheets selenium vacancies were observed at the edges. Moreover, these nanosheets are larger than the SnS2 nanosheets, show lower nanosheet homogeneity on substrates and contamination with selenium atoms from the synthesis was observed. The synthesized nanomaterials are interesting in various applications where the edge accessibility and/or directionality of the nanosheets play a major role as for example in gas sensing or field emission. … (more)
- Is Part Of:
- RSC advances. Volume 11:Issue 58(2021)
- Journal:
- RSC advances
- Issue:
- Volume 11:Issue 58(2021)
- Issue Display:
- Volume 11, Issue 58 (2021)
- Year:
- 2021
- Volume:
- 11
- Issue:
- 58
- Issue Sort Value:
- 2021-0011-0058-0000
- Page Start:
- 36483
- Page End:
- 36493
- Publication Date:
- 2021-11-11
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d1ra05672g ↗
- Languages:
- English
- ISSNs:
- 2046-2069
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 21342.xml