An electrically switchable anti-ferroelectric bilayer In2Se3 based opto-spintronic device. Issue 18 (29th April 2021)

• Record Type: Journal Article
• Authors: Yang, Yaqing; Zhang, Liwen; Chen, Jun; Zheng, Xiaohong; Zhang, Lei; Xiao, Liantuan; Jia, Suotang
• Is Part Of: Nanoscale. Volume 13:Issue 18(2021)
• Page Start: 8555
• Page End: 8561
• Publication Date: 2021-04-29
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d1nr00369k
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : The spin dependent photocurrent can be generated via the photogalvanic effect and largely tuned in an anti-ferroelectric bilayer In2 Se3 based opto-spintronic device. Abstract : Based on non-equilibrium Green's function combined with density functional theory (NEGF-DFT), we theoretically investigate the spin-related photogalvanic effect (PGE) in two anti-ferroelectric bilayer In2 Se3 structures by atomic first-principles calculations. It is found that, due to the absence of inversion symmetry and the presence of strong spin–orbital interaction (SOI) in anti-ferroelectric bilayer In2 Se3, the photoinduced charge-to-spin conversion can be achieved via the PGE. The generated spin-dependent photocurrent is largely spin-polarized and the corresponding spin polarization can vary from 0% to 100% depending on the photon energies, polarization and incident angles. Furthermore, it is found that, by tuning the polarization and the incident angles of light, the fully spin-polarized and pure spin photocurrent can be obtained. Most importantly, the spin dependent photocurrent can be largely tuned through the transition between two anti-ferroelectric bilayer In2 Se3 states by the gate voltage. The defined relative spin dependent photoresponse change ratio n s between two states is extremely large and its maximum value can be in the order of ∼10 4 . Therefore, our work demonstrates the great potential of bilayer In2 Se3 's novel application in two-dimensional non-volatile opto-spintronic devices.