Silicon-integrated lead-free BaTiO3-based film capacitors with excellent energy storage performance and highly stable irradiation resistance. Issue 26 (22nd June 2021)

• Record Type: Journal Article
• Authors: Zhao, Fan; Wu, Yilin; Dai, Yanzhu; Hu, Guangliang; Liu, Ming; Gao, Runlong; Liu, Linyue; Liu, Xin; Cheng, Yonghong; Hu, Tian-Yi; Ma, Chunrui; Hu, Dengwei; Ouyang, Xiaoping; Jia, Chun-Lin
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 26(2021)
• Page Start: 14818
• Page End: 14826
• Publication Date: 2021-06-22
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1ta03049c
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : The energy storage density and thermal stability of silicon-based lead-free BZTS film capacitors are greatly improved by inserting a high resistance dielectric HfO2 buffer layer between the BZTS thin film and the Si substrate. Abstract : Silicon integrated lead-free oxide thin film capacitors with high energy storage density ( W re ), high efficiency ( η ) and good thermal stability have great application potential in modern communication fields. Here, 1 mol% SiO2 -doped Ba(Zr0.35 Ti0.65 )O3 (BZTS) thin film capacitors are integrated on Si and HfO2 buffered Si substrates by using a radio-frequency magnetron sputtering system. It is found that the energy storage performances are significantly improved by inserting an HfO2 buffer layer (about 13.5 nm) between the BZTS layer and the Si substrate. The improved W re of the BZTS/HfO2 thin film capacitors can be up to 93.48 J cm −3 at room temperature, which is about 65% higher than that of the film without the HfO2 buffer layer, and the η is ∼ 71.44%. Moreover, the introduction of the HfO2 buffer layer leads to a superior thermal stability in a wide temperature range from −100 °C to 200 °C with a very small change rate of ∼3.39%. Under different irradiations with doses of He + from 1 × 10 12 ions per cm 2 to 7 × 10 15 ions per cm 2 and neutrons from 5 × 10 12 ions per cm 2 to 1 × 10 14 ions per cm 2, the BZTS thin film capacitors with the HfO2 buffer layer show ultra-stable energy storage performance. Our research provides an effective strategy for the integration of high performance BZTS thin film capacitors on Si substrates, and our results demonstrate potential of the Si integrated thin film capacitors for the application in nuclear technology, space stations, satellites, radiation centers and other harsh environments.