Layer dependence of out-of-plane electrical conductivity and Seebeck coefficient in continuous mono- to multilayer MoS2 films. Issue 47 (25th November 2021)

• Record Type: Journal Article
• Authors: Lee, Won-Yong; Kang, Min-Sung; Park, No-Won; Kim, Gil-Sung; Nguyen, Anh Duc; Choi, Jae Won; Yoon, Young-Gui; Kim, Yong Soo; Jang, Ho Won; Saitoh, Eiji; Lee, Sang-Kwon
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 47(2021)
• Page Start: 26896
• Page End: 26903
• Publication Date: 2021-11-25
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1ta07854b
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : We report on a direct comparison of the out-of-plane thermoelectric properties, such as Seebeck coefficient and electrical conductivity, of atomically thin MoS2 films. Abstract : We report on a direct comparison of the out-of-plane thermoelectric properties, such as Seebeck coefficient and electrical conductivity, of atomically thin MoS2 films. The films were prepared by a chemical vapor deposition method and were simultaneously investigated using a Cu-sandwiched structure. Specifically, this is the first study that measures the out-of-plane Seebeck coefficients of atomically thin mono- and bilayer MoS2 at 300 K. At room temperature, out-of-plane Seebeck coefficients for MoS2 films with one, two, and seven layers were measured to be approximately 129.4, 143.3, and 152.2 μV/K, respectively. Such behavior is seen because the increasing number of MoS2 layers increases the density of states of a system. In contrast to conventional thermoelectric materials, the electrical conductivities of these MoS2 films have the same tendency as the Seebeck coefficients. Our results show that thermoelectric devices can utilize the out-of-plane properties of MoS2 thin films with high power factors.