Switching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broadband spectral response. Issue 11 (4th March 2021)

• Record Type: Journal Article
• Authors: Aftab, Sikandar; Samiya, Ms; Liao, Wugang; Iqbal, Muhammad Waqas; Ishfaq, Mavra; Ramachandraiah, Karna; Ajmal, Hafiz Muhammad Salman; Haque, Hafiz Mansoor Ul; Yousuf, Saqlain; Ahmed, Zaheer; Usman khan, Muhammad; Rehman, Atteq Ur; Iqbal, Muhammad Zahir
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 11(2021)
• Page Start: 3998
• Page End: 4007
• Publication Date: 2021-03-04
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d0tc05894g
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Noble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications. Abstract : Noble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications. Here, we developed high-performance switching photodiodes based on mix-dimensional 2D palladium diselenide (PdSe2 ) and three-dimensional (3D) silicon (Si) heterojunctions with a broadband spectral response by a mechanical exfoliation technique. We studied the gate-tunable rectifying behavior of n-PdSe2 /p-Si diodes employing an ionic liquid gate and achieved a maximum diode rectification ratio I f / I r up to ∼1.0 × 10 5 with the lowest value of ideality factor ∼1.22 (at V tg = −2 V). At different temperatures (60 to 300 K), Zener tunneling and avalanche breakdown phenomena were detected at the junction of PdSe2 –Si. These devices showed excellent self-driven photoresponses over broadband wavelengths from 400 to 1200 nm. The response speed of estimated is 9.2/17.3 μs, which represents a fast photoresponse. Moreover, in our devices, open-circuit voltage ( V OC = 0.6 V) switching behavior is attained with the on/off state of the incident light. Moreover, these devices were attested for dynamic rectification, and this effectively rectified an input alternating-voltage sine wave signal to an output signal. The results of this study indicate that 2D PdSe2 can be employed for high-performance optoelectronic applications.