Dopant-free hole-transporting materials for stable Sb2(S, Se)3 solar cells. Issue 30 (28th March 2022)

• Record Type: Journal Article
• Authors: Xiang, Yinan; Guo, Huanxin; Cai, Zhiyuan; Jiang, Chenhui; Zhu, Changfei; Wu, Yongzhen; Zhu, Wei-Hong; Chen, Tao
• Is Part Of: Chemical communications. Volume 58:Issue 30(2022)
• Page Start: 4787
• Page End: 4790
• Publication Date: 2022-03-28
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1039/d1cc07041j
• Languages: English
• ISSNs: 1359-7345

Abstract

Abstract : This work reveals the interfacial interaction mechanism between HTMs and Sb2 (S, Se)3, and fabricates solar cells with excellent stability. Abstract : Herein, we demonstrate that a thiophene-modified quinoxaline core small molecule can be applied in Sb2 (S, Se)3 solar cells. We reveal that the interaction between thiophene and Sb2 (S, Se)3 through the Sb–S bond essentially improves the interfacial hole-extraction ability. This study provides a cost-effective dopant-free hole-transporting material for inorganic thin film solar cell applications with excellent stability.