The growth behavior of brain-like SnO2 microspheres under a solvothermal reaction with tetrahydrofuran as a solvent and their gas sensitivity. Issue 59 (22nd November 2021)

• Record Type: Journal Article
• Authors: Chen, Yang; Luo, Na; Li, Zhixin; Dong, Junping; Wang, Xiaohong; Cheng, Zhixuan; Xu, Jiaqiang
• Is Part Of: RSC advances. Volume 11:Issue 59(2021)
• Page Start: 37568
• Page End: 37574
• Publication Date: 2021-11-22
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/d1ra06675g
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A highly-sensitive MEMS sensor is fabricated based on brain-like SnO2 microspheres under a solvothermal reaction with tetrahydrofuran as a solvent. Abstract : In this paper, the growth behavior of brain-like SnO2 microspheres synthesized by a tetrahydrofuran (THF) solvothermal method was studied. Unlike water or ethanol as the solvent, THF is a medium polar and aprotic solvent. Compared with other common polar solvents, the THF has no strong irregular effects on the growth process of SnO2 . In addition, the viscosity of THF also helps the SnO2 to form a regular microstructure. The growth behavior of the brain-like SnO2 microspheres is controlled by changing the synthesis temperature of the reaction. The SEM and TEM results reveal that the SnO2 forms particles first (125 °C/3 h), and then these nanoparticles connect to each other forming nanowires and microspheres (diameter ≈ 1–2 μm) at 135 °C for 3 h; finally the microspheres further aggregate to form double or multi-sphere structures at 180 °C for 3 h. In this paper, the brain-like SnO2 microspheres obtained at 125 °C for 3 h were selected as sensitive materials to test their gas sensing performance at different operating temperature (50 °C and 350 °C). The H2 S was tested at 50 °C which is the lowest operating temperature for the sensor. The combustible gas (H2 /CH4 /CO) was measured at 350 °C which is the highest temperature for the sensor. They all have extremely high sensitivity, but only H2 S has excellent selectivity.