High‐performance hole‐selective V2OX/SiOX/NiOX contact for crystalline silicon solar cells. Issue 3 (10th January 2022)

• Record Type: Journal Article
• Authors: Du, Guanlin; Li, Le; Zhu, Haiyin; Lu, Linfeng; Zhou, Xi; Gu, Zeyu; Zhang, Shan‐Ting; Yang, Xinbo; Wang, Jilei; Yang, Liyou; Chen, Xiaoyuan; Li, Dongdong
• Is Part Of: EcoMat. Volume 4:Issue 3(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-01-10
• Subjects: crystalline silicon solar cells -- interfacial reaction -- nickel oxide -- passivating contact -- vanadium oxide; Materials -- Environmental aspects -- Periodicals; Clean energy -- Periodicals; 621.042
• DOI: 10.1002/eom2.12175
• Languages: English
• ISSNs: 2567-3173

Abstract

Abstract: High work function vanadium oxide (V2 OX, X < 5) is expected to induce strong upward band bending at crystalline silicon ( c ‐Si) surface thus selectively collect photogenerated hole‐carriers. However, the performance of c ‐Si solar cells employing V2 OX ‐based hole‐selective contacts is still under expectation. Herein, we improve the hole‐selectivity of V2 OX in combination with NiOX . The innovative V2 OX /NiOX stack shows reduced contact resistivity but deteriorated minority carrier lifetime due to undesired interfacial reaction between V2 OX and NiOX . Inserting an ultrathin SiOX interlayer suppresses the reaction and preserves the high work function of V2 OX . A remarkable power conversion efficiency of 22.03% (fill factor of 83.07%) was achieved on p ‐type c ‐Si solar cells featuring a full‐area V2 OX /SiOX /NiOX rear contact, which is so far the highest value reported for V2 OX ‐based selective contacts. Our work highlights the significance of implementing p ‐type transition‐metal‐oxides to boost the selectivity of V2 OX and the like. Abstract : High‐performance crystalline silicon solar cells based on hole‐selective V2 OX /NiOX contacts are demonstrated. With a SiOX interlayer in between the V2 OX /NiOX layers, a promising efficiency of 22.03% is achieved on p ‐type c ‐Si solar cells. The innovative stacked layer design and interfacial engineering offer a promising avenue for effective charge carrier manipulation for both photovoltaics and other optoelectronic devices.