Cite
HARVARD Citation
Han, Y. et al. (2022). Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures. Solid-state electronics. p. . [Online].
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Han, Y. et al. (2022). Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures. Solid-state electronics. p. . [Online].