Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS‐Compatible Sputtering Technique. Issue 15 (2nd March 2022)

• Record Type: Journal Article
• Authors: Bhattacharjee, Nirjhar; Mahalingam, Krishnamurthy; Fedorko, Adrian; Lauter, Valeria; Matzelle, Matthew; Singh, Bahadur; Grutter, Alexander; Will‐Cole, Alexandria; Page, Michael; McConney, Michael; Markiewicz, Robert; Bansil, Arun; Heiman, Don; Sun, Nian Xiang
• Is Part Of: Advanced materials. Volume 34:Issue 15(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-03-02
• Subjects: ferromagnets -- interface -- magnetic topological insulators -- topological insulators -- van der Waals materials; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202108790
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Breaking time‐reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c ‐axis‐oriented, topological insulator/ferromagnet heterostructure—Bi2 Te3 /Ni80 Fe20 because of diffusion of Ni in Bi2 Te3 (Ni‐Bi2 Te3 ). The AFM property of the Ni‐Bi2 Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni‐Bi2 Te3 layer is carried out using selected‐area electron diffraction, electron energy loss spectroscopy, and X‐ray photoelectron spectroscopy. These studies, in parallel with first‐principles calculations, indicate a solid‐state chemical reaction that leads to the formation of Ni−Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi2 Te4 in the Ni‐Bi2 Te3 interface layer. The Neél temperature of the Ni‐Bi2 Te3 layer is ≈63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal−oxide−semiconductor (CMOS)‐process‐compatible sputtered‐MTI heterostructures, leading to novel materials for topological quantum devices. Abstract : Study of topological magnetic phases formed in topological insulators coupled with a ferromagnet is performed on a high‐quality c ‐axis‐oriented Bi2 Te3 thin film grown using a magnetron sputtering process. A topological antiferromagnetic (AFM) phase of Ni‐Bi2 Te3 is revealed in the interface of Bi2 Te3 coupled with the ferromagnet, Ni80 Fe20 . The Ni‐Bi2 Te3 layer is found to contain Ni−Te bonds and shows evidence of the formation of the topological AFM compound NiBi2 Te4 .