Cite
HARVARD Citation
Zeng, Y. et al. (2022). 2D FeOCl: A Highly In‐Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature‐Oscillation Chemical Vapor Transport. Advanced materials. 34 (14), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Zeng, Y. et al. (2022). 2D FeOCl: A Highly In‐Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature‐Oscillation Chemical Vapor Transport. Advanced materials. 34 (14), p. n/a. [Online].