Influence of substrate temperature on the microstructure of YSZ films and their application as the insulating layer of thin film sensors for harsh temperature environments. Issue 10 (15th May 2022)

• Record Type: Journal Article
• Authors: Liu, Hao; Mao, Xiling; Jiang, Shuwen
• Is Part Of: Ceramics international. Volume 48:Issue 10(2022)
• Page Start: 13524
• Page End: 13530
• Publication Date: 2022-05-15
• Subjects: Yttria-stabilized zirconia -- Insulation properties -- Thin film sensor -- High temperature -- Multilayer structure; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.01.231
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Thin film sensors are employed to monitor the health of hot-section components of aeroengine intelligence (for instance, blades), and electrical insulating layers are needed between the metal components and thin film sensors. For this purpose, the electrical insulation characteristics of an yttria-stabilized zirconia (YSZ)/Al2 O3 multilayer insulating structure were investigated. First, YSZ thin films were deposited by DC reactive sputtering at various substrate temperatures, and the microstructural features were investigated by scanning electron microscopy and X-ray diffraction. The results indicate that the micromorphology of the YSZ thin film gradually became denser with increasing substrate temperature, and no new phases appeared. The compact and uniform topography of the YSZ thin film improved the insulation properties of the multilayer insulating structure and enhanced the adhesion of the thin film sensors. In addition, the electrical insulation properties of the YSZ/Al2 O3 multilayer insulating structure were evaluated via insulation resistance tests from 25 to 800 °C, in which the YSZ thin film was deposited at 550 °C. The results show that the insulation resistance of the multilayer structure increased by an order of magnitude compared with that of the conventional Al2 O3 insulating layer, reaching 135 kΩ (5.1 × 10 −6 S/m) at 800 °C. Notably, the insulation resistance was still greater than 75 kΩ after annealing at 800 °C for 5 h. Finally, the shunt effect of the YSZ/Al2 O3 multilayer insulating structure was estimated using a PdCr thin film strain gauge. The relative resistance error was 0.24%, which demonstrates that the YSZ/Al2 O3 multilayer insulating structure is suitable for thin film sensors.