Controllable electrical, magnetoelectric and optical properties of BiFeO3 via domain engineering. (June 2022)

• Record Type: Journal Article
• Authors: Liu, Yiqian; Wang, Yao; Ma, Ji; Li, Shun; Pan, Hao; Nan, Ce-Wen; Lin, Yuan-Hua
• Is Part Of: Progress in materials science. Volume 127(2022)
• Publication Date: 2022-06
• Subjects: BiFeO3 -- Domain engineering -- Ferroelectric -- Magnetoelectric -- Optical -- Domain wall; AAO anodized alumina -- AF antiferromagnetic or antiferromagnetism -- AFE antiferroelectric -- AFM atomic force microscope -- AMR anisotropic magnetoresistance -- APB antiphase boundaries -- BFCO BiFe1-xCoxO3 -- BFO bismuth ferrite -- BST (Ba, Sr)TiO3 -- BTO BaTiO3 -- BZO BaZrO3 -- BZT Ba(Zr, Ti)O3 -- C cubic -- CAFM conducting atomic force microscope -- CB conduction band -- CBM conduction band minima -- CCMO Ca0.96Ce0.04MnO3 -- CDW conductive domain wall -- CFO CoFe2O4 -- CL cubic-like -- DM Dzyaloshinskii-Moriya -- DSO DyScO3 -- DW domain wall -- EB exchange bias -- EDS energy-dispersive spectroscopy -- EELS electron energy-loss spectroscopy -- FE ferroelectric or ferroelectricity -- FeRAM ferroelectric random-access memory -- FM ferromagnetic or ferromagnetism -- FTJ ferroelectric tunnel junctions -- GHz gigahertz -- HAADF high-angle annular dark field -- HRTEM high resolution transmission electron microscope -- IP in-plane -- ITO (In, Sn)2O3 -- KBT (K0.5Bi0.5)TiO3 -- LAO LaAlO3 -- LBFO La-doped BFO -- LMN La(Mg2/3Nb1/3)O3 -- LSMO La0.7Sr0.3MnO3 -- M monoclinic -- ME magnetoelectric -- MFM magnetic force microscope -- MLCC multilayer ceramic capacitor -- MPB morphotropic phase boundaries -- MR magnetoresistance -- O orthorhombic -- OOP out-of-plane -- PC pseudo-cubic -- PEC photoelectrochemical -- PEEM X-ray photoemission electron microscopy -- PFM piezoresponse force microscopy. PhAFM, photoelectric AFM -- PhAFM photoelectric AFM -- PMN Pb(Mg1/3Nb2/3)O3 -- PTO PbTiO3 -- PV photovoltaic -- PZO PbZrO3 -- PZT Pb(Zr, Ti)O3 -- R rhombohedral -- RE rare earth elements, e.g., Dy3+, Tb3+, etc. -- RFE relaxor ferroelectric -- RRAM resistive random-access memory -- SHG second-harmonic generation -- SPM scanning probe microscopy -- SRO SrRuO3 -- STEM scanning transmission electron microscopy -- STO SrTiO3 -- T tetragonal -- TEM transmission electronic microscopy -- TER tunneling electroresistance -- THz terahertz -- TSO TbScO3 -- VB valence band -- VBM valence band maxima -- XMCD X-ray magnetic circular dichroism -- XMLD X-ray magnetic linear dichroism -- YAO YAlO3; Materials science -- Periodicals; Science des matériaux -- Périodiques; 620.1105
• DOI: 10.1016/j.pmatsci.2022.100943
• Languages: English
• ISSNs: 0079-6425

Abstract

Abstract: Bismuth ferrite (BiFeO3, BFO) as one of the few single-phase room-temperature multiferroics, has aroused ever-increasing enthusiasm in research communities during the past two decades. The robust ferroelectricity, promising magnetoelectric coupling and remarkable optical behaviors of BFO all enrich its physical phenomena and functional properties. The microscopic ferroic domain structures in BFO determine both the static configurations and dynamic behaviors of order parameters, which is the fundamental basis for understanding and controlling of macroscopic properties. Here, we provide a comprehensive and up-to-date review of the intensive research advances of BFO, in the framework of domain engineering. We begin with an introduction to the rich domain structures of BFO and typical domain engineering strategies, such as chemical modification, electrostatic boundary control, strain engineering, substrate engineering, etc. Then, electrical properties (ferroelectricity, piezoelectricity and conduction), magnetoelectric couplings and optical effects (photovoltaic, photocatalytic, mechanical-optical, etc.) modulated by domain engineering in BFO are discussed in sequence. Remarkable electrical, magnetic and optical phenomena at the domain walls of BFO, which have been discovered and intensively explored recently, are also summarized. Finally, remaining challenges and perspectives are proposed for further domain engineering in BFO-based functional materials, devices and applications.