Thermoelectric performance of In and Ga single/dual-doped ZnO ceramics fabricated by spark plasma sintering. Issue 10 (15th May 2022)

• Record Type: Journal Article
• Authors: Jeong, Ahrong; Ohtaki, Michitaka; Jang, Byung-Koog
• Is Part Of: Ceramics international. Volume 48:Issue 10(2022)
• Page Start: 14414
• Page End: 14423
• Publication Date: 2022-05-15
• Subjects: Thermoelectrics -- ZnO -- Secondary phase -- Spark plasma sintering; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.01.334
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: In single-doped [Zn(1−y) Iny ]O (y = 0.005, 0.01, 0.02, 0.03, 0.05) ceramics and In and Ga dual-doped [Zn(1−x−y) Gax Iny ]O (y = 0.005; x = 0.005, 0.01, 0.02, 0.03, 0.05) ceramics were prepared using a solid-state reaction and spark plasma sintering at 1423 K in vacuum. The microstructural and chemical composition analyses revealed that Zn7 In2 O10 and ZnGa2 O4 existed as the secondary phases in the single-doped ZnO (y ≥ 0.02) and dual-doped ZnO (y = 0.005; x ≥ 0.02) ceramics. Doped (single and dual) ZnO showed a high relative density of 92.5–100% as compared to pure ZnO (91.3%). The dual-doped sample with x = 0.005 and y = 0.005 prepared at 1046 K showed the highest power factor of 1.05 mW K −2 m −1 . The dual-doped ZnO ceramics thereby showed an improved thermoelectric performance, attaining the figure of merit of 0.17 as compared to that of pure ZnO (0.12) at 1046 K.