All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping? (Adv. Mater. Interfaces 10/2022). Issue 10 (4th April 2022)

• Record Type: Journal Article
• Authors: Renn, Lukas; Walter, Lisa S.; Watanabe, Kenji; Taniguchi, Takashi; Weitz, R. Thomas
• Is Part Of: Advanced materials interfaces. Volume 9:Issue 10(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-04-04
• Subjects: charge transport -- field‐effect transistor -- interface -- organic semiconductor -- van‐der‐Waals; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.202270056
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : Charge Transport in Organic Field‐Effect Transistors In article number 2101701, Lukas Renn, Thomas Weitz, and co‐workers develop organic transistor devices consisting of a monolayer‐thin perylene‐diimide n‐type semiconductor on a rectangular shaped h‐BN flake. For some devices the semiconducting film is encapsulated in between h‐BN layers by stamping an additional h‐BN flake on top. Charge transport measurements show signs of interfacial trapping, despite the trap‐free h‐BN substrate, suggesting interfacial contaminants are present.