WS2/Bi2O2Se van der Waals Heterostructure with Straddling Band Configuration for High Performances and Broadband Photodetector. Issue 9 (4th February 2022)

• Record Type: Journal Article
• Authors: Fang, Chaocheng; Han, Jianfu; Yu, Ming; Liu, Wenliang; Gao, Shengmei; Huang, Kai
• Is Part Of: Advanced materials interfaces. Volume 9:Issue 9(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-02-04
• Subjects: Bi 2O 2Se -- broadband photodetection -- heterostructures -- photodetectors -- WS 2; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.202102091
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: 2D bismuth oxyselenide (Bi2 O2 Se) nanosheets have received increasing attention in the field of electronics and optoelectronics due to their high‐mobility, moderate energy bandgap, and air‐stability. However, due to the intrinsic high mobility, the photodetectors based on 2D Bi2 O2 Se have an inevitable high dark current, leading to high power consumption and limiting its potential application in photodetection. Herein, a novel highly sensitive WS2 /Bi2 O2 Se van der Walls (vdWs) heterostructure with straddling band configuration is assembled on fluorophlogopite substrate. Owing to the effective separation of photogenerated electron–hole pairs and the quantum tunneling effect, the responsivity and external quantum efficiency of the WS2 /Bi2 O2 Se heterostructure are 628 mA W −1 and 147.6% under 532 nm illumination, respectively. The I photo / I dark ratio with more than two orders of magnitude can be obtained, and the rise time is ≈33 ms, while the fall time is 38 ms. Furthermore, the heterostructure achieves a broadband photodetection capability from visible to near infrared (532–1450 nm). The results suggest that the WS2 /Bi2 O2 Se vdWs heterostructure possesses a promising potential application prospect in high performance and broadband photodetectors. Abstract : A novel highly sensitive WS2 /Bi2 O2 Se van der Waals (vdWs) heterostructure with straddling band configuration is assembled on fluorophlogopite substrate. Owing to the effective separation of photogenerated electron–hole pairs and the quantum tunneling effect, WS2 /Bi2 O2 Se heterostructures exhibit excellent responsivity under 532 nm illumination. Furthermore, the heterostructure achieves a broadband photodetection capability from 532 to 1450 nm.