Effect of CuO on Electrical Property, Seebeck Coefficient and Power Factor of CuGd2O4. Issue 1 (28th March 2022)

• Record Type: Journal Article
• Authors: Yamchumporn, P.; Boonin, K.; Singsoog, K.; Seetawan, T.; Kaewkhao, J.
• Is Part Of: Integrated ferroelectrics. Volume 224:Issue 1(2022)
• Page Start: 84
• Page End: 89
• Publication Date: 2022-03-28
• Subjects: Solid-state reaction -- CuGd2O4 -- seebeck coefficient; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2022.2035598
• Languages: English
• ISSNs: 1058-4587

Abstract

Abstract: The effect of increasing molar ratio for the concentration of CuO in the compound xCuO:1Gd2 O3 ( x = 2.0, 2.5, 3.0 and 3.5 mol) produced by solid state reaction method was investigated in this study. Thermoelectric properties such as Seebeck coefficient, the electrical resistivity and power factor were investigated in the temperature range of 400 − 800 K using the instrument, ZEM-3 Series under helium gas atmosphere. Through the inspection, the following results were reported: the electrical resistivity drops as the temperature increases, indicating the semiconductor's characteristic behavior. Seebeck coefficient shows a negative value throughout the temperature range used in the investigation. The power factor can be calculated from the relation of P = S 2 /ρ (where S is Seebeck coefficient and ρ is electrical resistivity) with the highest value of 4.65 µW −1 m −1 K −2 at 570 K.